Characterization of HV-MAPS using TCAD simulations

by Annie Meneses González

Thursday 4 Jul 2024, 10:00 → 12:00 Europe/Berlin

Kreuzbergweg 24/0.052 (FTD) - Präsentationsraum (FTD)

High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) have emerged as a promising technology for silicon tracking detectors in particle physics. HV-MAPS, selected as the foundational technology for the Mu3e Pixel Tracker and under investigation for potential implementation in future detector applications, presents unique design challenges due to its intricate structure and complex electric field distribution.

 

This talk compares Technology Computer-Aided Design (TCAD) simulations and experimental measurements in HV-MAPS. The results show that the simulations correctly describe key experimental parameters like breakdown voltage and explain the loss of hit detection efficiency at the edges and corners of the pixels. The TCAD simulations provide insights into the behaviour of the charge collection diode of HV-MAPS prototypes, facilitating design optimisations. These studies primarily investigated the depletion zone, breakdown voltage, and electric field distribution. Additionally, the characterisation of MuPix prototypes, using testbeam results, allows for the investigation of the efficiency and cluster size for different angles of incidence of the beam. The findings of this investigation contribute to an enhanced understanding of HV-MAPS and their potential for developing more efficient and reliable silicon tracking detectors in particle physics experiments.

 

 

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